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nvSRAM (不揮発性SRAM)

Non-volatile Static Random-Access Memory (nvSRAM)

Infineon nvSRAMs in BGA package

 

nvSRAM (Non-volatile SRAM or NVRAM) is a stand-alone non-volatile memory that enables you to instantly capture and preserves a copy of the SRAM data into non-volatile memory when power is interrupted and allows the data to be recalled on power up. They are ideal for data-logging applications like high-performance Programmable Logic Controllers (PLC), Smart Meters and Network Routers requiring fast write speed, high endurance and instant non-volatility. Infineon's nvSRAMs are available in industry-standard, RoHS-compliant packaging options such as TSOP, FBGA, SSOP, and SOIC packages.

I2C | SPI | QSPI | Parallel (x8, x16, x32)

  • 64kb
  • 128kb
  • 256kb
  • 512kb
  • 1Mb
  • 4Mb
  • 8Mb
  • 16Mb
  • nvSRAMs are used in aerospace applications
  • Infineon offers space grade nvSRAMs to log critical data even in harsh environmental conditions
  • Network Routers use nvSRAMs to store critical configuration data to quickly recover after a power outage and log environmental variables like voltage, temperature, fan speed and faults that occur during normal operation.
  • nvSRAMs are used in Smart meter applications to continuously log energy consumption
  • Infineon nvSRAMs are used in Industrial automation systems to log states and configuration settings of CNCs.

Fast access

Fast access

Performs random access read and write as fast as 20ns

Infinite Endurance

Infinite Endurance

Offers unlimited writes and reads

Space Saving

Space Saving

Smaller board space compared to BBSRAM

Radiation Tolerant

Radiation Tolerant

Immune to soft errors caused by radiation

 

Infineon’s nvSRAM Memory Family

Infineon’s nvSRAM combines Cypress' industry leading SRAM technology with best-in-class SONOS nonvolatile technology. Infineon offers a comprehensive portfolio of serial and parallel nvSRAM non-volatile memories.

Our parallel nvSRAMs are industry’s fastest parallel nonvolatile RAM solutions with fastest access time of 20ns. These are available in densities ranging from 64kbit – 16Mbit supports wide voltage range from 2.7V to 5.5V. These are used in applications such as RAID storage, industrial automation, computing and networking.

Our serial nvSRAMs provide infinite read/write endurance and high speed reads and writes. These are available in densities ranging from 64kbit – 1Mbit supports wide voltage range from 2.7V to 5.5V. These are used in applications such as industrial control and automation equipment and smart meters.

Block diagram representation of nvSRAM architecture

How does nvSRAM work?: nvSRAM with SONOS Technology

Infineon’s nvSRAM products feature a SONOS nonvolatile cell, which is built on a standard SRAM cell. When normal power is applied, the device looks and behaves in a similar manner as a standard SRAM. However, when power drops out, each cell’s contents can be stored automatically in the nonvolatile element positioned above the SRAM cell. This nonvolatile element uses standard CMOS process technology to obtain the high performance of standard SRAMs.

SONOS technology take advantage of Fowler-Nordheim Tunneling (FN Tunneling) to store data by trapping charge in a sandwiched nitride layer. A key advantage of FN Tunneling is that it results in vastly higher NV endurance and much slower wear out. Another advantage of SONOS technology is its ease of integration in CMOS (only two additional masks). This allows the NV cell to be located immediately adjacent to the 6T SRAM cell in each memory bit making the transfers between SRAM to NV all happen in parallel and at very low power levels. Unlike Floating Gate technology, SONOS memory device enables thinner gate stack height for stronger electrostatic control, and thus is more scalable as well. To know more about SONOS technology, read this whitepaper.

Comparison between Floating gate and SONOS technology

nvSRAM vs competing non-volatile memory solutions

nvSRAM products are among the industry’s lowest power nonvolatile memory solutions consuming lesser active currents than competing EEPROM and BBSRAM (Battery-Backed SRAM or BatRAM) solutions. Additionally, unlike batter backed solutions, nvSRAM memories don’t need an external battery to retain charge. This makes nvSRAM suitable for data-logging applications such as smart meters. The infinite endurance and instant non-volatility ensure that nvSRAMs outperform existing memories like EEPROM and BBSRAM in several datalogging applications.

特長 nvSRAM BBSRAM EEPROM
Density Medium-High Medium-High Low-Medium
Endurance Infinite Limited Low
Retention High Low Medium
Additional Battery いいえ はい いいえ
Write Time Fast Medium Slow

Read this application note to learn more on the benefits of using nvSRAM over Battery backed solutions.

About Infineon RAM Memory Solutions

With over 3 decades of leadership in the memory business, Infineon offers a broad portfolio of volatile and non-volatile memories. Our volatile memory offerings include Synchronous and Asynchronous SRAMs for the lower densities and HyperRAMs for the higher densities. Our non-volatile portfolio includes F-RAM and nvSRAM products.

Infineon Products

Non Volatile Static Random Access Memory (nvSRAMs)

Infineon’s parallel nvSRAMs products are the industry’s fastest parallel nonvolatile RAM solutions with access times as low as 20 ns. They provide unlimited read/write endurance, 1 million STORE cycles on power-loss and an optional Real-Time Clock (RTC).

Infineon’s serial nvSRAMs products provide infinite read/write endurance, 1 million STORE cycles on power loss, high speed reads and writes, nonvolatile data retention and an optional Real Time Clock (RTC). Serial nvSRAMs is an excellent alternative to EEPROM which suffers from a 1 million write cycle limitation and may require wear leveling and increased memory capacity to support a product over its lifespan

nvSRAMs uses an external Vcap capacitor to complete nonvolatile data transfer on power loss

Parallel nvSRAMs
Lowest access time of 20ns
Density:
64kb – 16Mb
Interface:
X8, x16, x32
Voltage range:

2.7 – 3.6V

3.0 – 3.6V

4.5 – 5.5V

使用温度範囲:

Automotive E(-40˚C to 125˚C)

Industrial ( -40˚C to +85˚C)

Military (-55˚C to +125˚C)

Package options:
SOP, TSOP-II, BGA, DIP
Serial nvSRAMs
Infinite read/write endurance
Density:
64kb – 1Mb
Interface:
QSPI, SPI, I2C
Voltage Range:

2.7 – 3.6V

4.5 – 5.5V

 

使用温度範囲:

Industrial (-40˚C to +85˚C)

Industrial Q(-55˚C to +125˚C)

 

Package options:
DFN, SOP
CY14NVSRAMKIT-001: Cypress' nvSRAM Development Kit

CY14NVSRAMKIT-001

Cypress' nvSRAM Development Kit

CY14NVSRAMKIT-001 is an easy-to-use and inexpensive nonvolatile SRAM (nvSRAM) development kit for Cypress’s high-performance and high-reliability parallel nvSRAM devices. The nvSRAM is a 16-Mbit high performance SRAM that is backed by Cypress’s Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) nonvolatile technology making it the ideal replacement for battery-backed SRAM (BBSRAM), MRAM, and other in high-performance applications.

nvSRAM のアプリケーション

RAID Controller Cards
    Programmable Logic Controllers (PLCs)
      Network Routers
        Electronic Gaming Machines
          Vendor OS ソフトウェア ダウンロード
          サイプレス - CY14NVSRAMKIT-001: Cypress’s nvSRAM Development Kit Example Project