Excelon™, Cypress’ next-generation Ferroelectric RAM (F-RAM), delivers the industry’s lowest-power mission-critical nonvolatile memory, by combining ultra-low-power operation with high-speed interfaces, instant nonvolatility and unlimited read/write cycle endurance. This makes Excelon the ideal data-logging memory for portable medical, wearable, IoT sensor, industrial and automotive applications.

Highlights

• Up-to 150x reduction in typical standby current (1 μA) and hibernate current (0.1 μA) compared to current F-RAMs
• Greater than 10x increase in performance with the addition of a 108 MHz QSPI, compared to competing SPI F-RAMs
• Offers NoDelay™ writes to capture data instantly with no soak time requirement and without any additional components for power back-up
• 2 Mbit, 4 Mbit, and 8 Mbit density options
• Operating voltage range: 1.71–1.89V and 1.80–3.60V
• Commercial (0°C to +70°C), Industrial (-40°C to +85°C), Auto-A (-40°C to +85°C) and Auto-E (-40°C to +125°C) temperature grades

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Excelon LP for Portable Medical, Wearable, and IoT Devices

• Provides multiple power-saving modes, including hibernate, deep power-down and standby
• Consumes 200x less energy than EEPROM and 3,000x less energy than NOR Flash products
• Offers read/write endurance of 1,000 trillion write cycles to log data every millisecond for more than 3,000 years
• Introduces 8 Mbit density F-RAM, the highest-density Serial F-RAM, to meet the growing data-logging requirement in these applications
• Available in small footprint ~10mm², 8 pin GQFN package

Excelon Ultra for High-Performance Industrial Applications

• Provides a low-pin-count 108 MHz QSPI interface that is as fast as a parallel interface with 35 ns burst access time
• Offers read/write endurance of 100 trillion cycles to log data continuously for 15-20 years at 85°C
• Replaces a multi-component solution (SRAM + battery + power management controller) with a single-chip solution and thereby improves reliability and reduces the BOM cost

Excelon Auto for Automotive Applications

• AEC-Q100-qualified and Functional Safety (ISO 26262)-compliant memory
• Offers read/write endurance of 10 trillion cycles to log data every 10 microseconds for 20 years
• Replaces a multi-component solution (SRAM + battery + power management controller) with a single-chip solution improve reliability and reduce the BOM cost

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