You are here

航空宇宙および防衛 | サイプレス セミコンダクタ

航空宇宙および防衛

Memory solutions for Aerospace and Defense

Aerospace and defense platforms require reliable, secure and robust memory solutions capable of meeting strict performance and environmental metrices. These compute-intensive applications put increasing demands on memory performance and density to handle the large amounts of data sourced from multiple sensors and processor nodes.

Quality, Reliability, Longevity Delivered

Cypress Aerospace & Defense products adhere to the most stringent standards in the industry. Dedicated process flows allow these products to meet or exceed QML-Q and QML-V certifications. Proprietary manufacturing processes ensure zero-defect products with long lifecycles based on mature and reliable process technologies. Cypress’ Lifecyle Management Programs ensure the industry’s most trustworthy, long-term product support.

Radiation Hardened Solutions

Satellites operating in space must endure extreme operating environments. Cypress’ Radiation-Hardened memories are QML-V certified, meeting the reliability and lifecycle demands of space applications. These SRAM, Flash and F-RAM solutions enhance overall system computing limits, while providing Size, Weight and Power (SWaP) benefits and greater design flexibility.

Defense Portfolio

Cypress' defense portfolio offers a wide selection of NOR Flash, F-RAM, nvSRAM and SRAM memories that provide design options and flexibility while reducing system cost in applications such as radar, electronic warfare, avionics and weapon systems. For instance, our QML-Q-certified nvSRAM products offer the high performance of traditional SRAMs while providing the added benefits of non-volatility.

Commercial-off-the-Shelf (COTS) Portfolio

Cypress supplies a wide range of memory products designed for demanding automotive, industrial and medical applications and leverages this broad portfolio for use in mil/aero applications where systems may not require traditional mil/aero certifications but do require robust performance in harsh environments.

Cypress Customizable Solutions

- Die and Wafer Sales

- Extreme Environment Solutions

- Custom-Screened Products

Radiation-Hardened SRAM Portfolio

Cypress radiation-hardened SRAM products provide industry-leading performance while adhering to the utmost standards for reliability. The Cypress Radiation-Hardened Quad Data Rate and Fast Asynchronous SRAM memories are the fastest space-qualified SRAM memories equipped with numerous features that are engineered to satisfy the needs of today's advanced space systems and beyond.

特徴

  RadStop™ QDR®-II+ SRAM
Density (Mb) 72 144
Speed (MHz) /Access Time (ns) 250MHz 250MHz
Configurations 4M x 18, 2M x 36 8M x 18, 4M x 36
Temperature Range (°C) -55 to 125 -55 to 125
Voltage VDD = 1.8V, VDDQ = 1.5V VDD = 1.8V, VDDQ = 1.5V
On-Die Termination いいえ はい
QML Certification Level QML-V QML-V
Prototype Option はい はい
Total Dose (Krad) 300 200
SEL (MeV·cm2/mg) >120 (125°C) >120 (125°C)
SEU (Upsets/bit-day) 1.34e-7 3.34e-7
ECC Correction IP Controller Option IP Controller Option
  製品セレクター 製品セレクター

 

  RadStop™ Fast Async SRAM
Density 4 16
Speed (MHz) /Access Time (ns) 12 ns 10 ns
Configurations 256k x 16, 512k x 8 1M x 16 / 2M x 8 / 512k x 32
Temperature Range (°C) -55 to 125 -55 to 125
Voltage VCC = 3.3V VDD = 1.8V – 5.0V
パッケージ 36 FP 54 CTSOP / 40 FP / 76 FP
QML Certification Level QML-V QML-V
Prototype Option はい はい
Total Dose (Krad) 300 200
SEL (MeV·cm2/mg) 120 (125°C) 60 (95°C)
SEU (Upsets/bit-day) 5e-8 <1e-10
ECC Correction なし Embedded (SECDEC)
  製品セレクター 製品セレクター

 

Radiation Hardened Nonvolatile Memory Portfolio

Cypress radiation-hardened nonvolatile memory products are the first serial-protocol-enabled nonvolatile memories for FPGA and processor boot code solutions. They serve a variety of state-of-the-art space-qualified, high-performance FPGAs as well as arm®-based microcontrollers. Industry leading endurance and data retention is delivered to our customers base.

特徴

  FRAM NORフラッシュ
Density (Mb) 2 256 / 512
Speed (MHz) /Access Time (ns) 40 MHz / 55ns 133MHz SDR
Configurations SPI QSPI / Dual QSPI
Temperature Range (°C) -55 to 125 -55 to 125
Voltage VDD = 2.0V – 3.6V VDD = 2.7V – 3.6V
Endurance 100 Trillion 1000
Data Retention 11khr (125°C) 15 yrs (125°C)
パッケージ 16 CSOP 36 FP / 36 FP
QML Certification Level QML-V (in Qualification) QML-V equivalent (in Qualification)
Prototype Option はい はい
Total Dose (Krad) 150 30 (biased) 150 (unbiased)
SEL (MeV·cm2/mg) >106 (125°C) >60 (80°C)
SEU (Upsets/bit-day) <1e-11 <1e-16
ECC Correction Embedded なし
  製品セレクター 製品セレクター

 

Defense Memory Portfolio

Defense nvSRAM

Cypress’ defense-grade memory products portfolio consists of the world's most-reliable nonvolatile memory. The SRAM provides unlimited read and write cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell. These products are designed and tested to withstand military operating temperature ranges and come in robust CERDIP packages.

  256 Kb Defense Parallel nvSRAM 1Mb Defense Parallel nvSRAM
容量(KB) 256 1,024
Access Time (ns) 35 35
Configurations 32k x 8 128k x 8
Temperature Range (°C) -55 to 125 -55 to 125
Data Retention 100 年 100 年
Max. Operating VCCQ (V) 5.5 5.5
Min. Operating VCCQ (V) 4.5 4.5
QML Certification Level QML-Q QML-Q
パッケージ 32 CERDIP 32 CERDIP
  製品セレクター 製品セレクター

 

Commercial Memory (COTS)

NORフラッシュ

Cypress offers the industry’s highest performance, most secure, low-pin-count serial NOR Flash and parallel NOR Flash memories. Our broad portfolio makes it easy to find the ideal solution for your embedded system or FPGA boot code solutions. The industry standard Quad SPI (Serial Peripheral Interface) interface is simple to use and is supported by virtually all modern chipsets. NOR Flash is the ideal memory for code storage in embedded systems due to its fast random read performance. This performance also supports XIP (eXecute In Place) functionality which allows host controllers to execute code directly from the NOR Flash memory without needing to first copy the code to a RAM. Higher levels of serial NOR memory performance have enabled XIP to be used on a wide variety of designs in many applications.

Cypress offers the widest range of military-temperature-qualified serial and parallel NOR Flash memories. Cypress backs all of its products with world-class quality and support.

  Serial NOR Parallel NOR
Density 64 Mb – 1 Gb 64 Mb – 4Gb
Interface/Width SPI / QSPI x16
Max. Frequency 133 MHz SDR / 66MHz DDR 90-130 ns
Package Types FBGA, SOIC FBGA, TSOP
使用温度範囲 Commercial, Industrial, Automotive, Military Commercial, Industrial, Automotive, Military
  製品セレクター 製品セレクター

 

SRAM

Cypress offers a complete range of high-density synchronous SRAM families, including QDR/DDR, I and II, No Bus Latency™ and standard pipelined and flow-through products. Cypress delivers the industry’s broadest portfolio of 65-nm synchronous SRAMs with speeds up to 1066 MHz. Cypress is also a market leader in the asynchronous SRAM space, and offers the broadest portfolio of fast asynchronous and low-power asynchronous SRAM (MoBL™) devices.

  同期 非同期
Density 9 Mb - 144 Mb 256 Kb - 64 Mb
Width x18, x36 x8, x16, x32
Max. Frequency 1066MHz 10 ns
Package Types BGA, FCBGA, TQFP FBGA, BGA, TQFP, SOJ, TSOP
使用温度範囲 Commercial, Industrial, Automotive, Military Commercial, Industrial, Automotive, Military
  製品セレクター 製品セレクター

 

nvSRAM

Cypress’ nonvolatile SRAM (nvSRAM) integrates the company’s proprietary Quantum Trap™ nonvolatile elements into high-performance SRAM memory cells. The memory array is accessed the same way as a conventional SRAM, supporting standard system designs while adding the ability to retain data when power is lost.

  Parallel Serial, I2C, SPI, QSPI
Density 16 Kb - 16 Mb 64 Kb - 1 Mb
Width x18, x16, x32 なし
Cycle Time 20 - 45 ns 1 - 104 MHz
RTC はい はい
Packages Types TSOP, FBGA, SSOP, SOIC, CERDIP DFN, SOIC
使用温度範囲 Commercial, Industrial, Military Commercial, Industrial
  製品セレクター 製品セレクター

Radiation Hardened Memories Product Documentation

Document Type タイトル
データシート CYRS1049DV33: 4-Mbit (512 K × 8) Static RAM with RadStop™ Technology
CYRS1542AV18, CYRS1544AV18: 72-Mbit QDR® II+ SRAM Two-Word Burst Architecture with RadStop™ Technology
CYRS1543AV18, CYRS1545AV18: 72-Mbit QDR® II+ SRAM Four-Word Burst Architecture with RadStop™ Technology
CYRS2642KV18/CYRS2644KV18, 144-MBIT QDR® II+ SRAM Two-Word Burst Architecture with ODT and RadStop™ Technology
CYRS2643KV18/CYRS2645KV18, 144-MBIT QDR® II+ SRAM Four-Word Burst Architecture with ODT and RadStop™ Technology
CYRS1642KV18, CYRS1644KV18: 144-Mbit QDR® II+ SRAM Two-Word Burst Architecture with RadStop™ Technology
CYRS1643KV18, CYRS1645KV18: 144-Mbit QDR® II+ SRAM Four-Word Burst Architecture with RadStop™ Technology
CYRS1061G, 16-Mb (1 M × 16) Static RAM with ECC and RadStop™ Technology
Standardized Military Drawings

5962 Series
5962F11235 – 4 Mb Fast Async SRAM x8
5962F11201 – 72 Mb QDR II+ SRAM x18 B2/B4
5962F11201 – 72 Mb QDR II+ SRAM x36 B2/B4
5962R18214 – 144 Mb QDR II+ SRAM x18 B2/B4
5962R18215 – 144 Mb QDR II+ SRAM x36 B2/B4
5962R20202 – 16 Mb Fast Async SRAM x16
5962-18211 – 256 kb nvSRAM x8
5962-18212 – 1 Mb nvSRAM x8
Radiation Reports RadHard 72 Mb QDR® II+ SRAM TID Report
RadHard 72 Mb QDR® II+ SRAM SEE Report
RadHard 144 Mb QDR® II+ SRAM TID Report
RadHard 144 Mb QDR® II+ SRAM SEE Report
RadHard 4 Mb FAST Async SRAM TID Report
RadHard 4 Mb FAST Async SRAM SEE Report
RadHard 16 Mb FAST Async SRAM SEE Report
RadHard 16 Mb FAST Async SRAM TID Report
アプリケーション ノート AN4011 - Choosing The Right Cypress Synchronous SRAM
AN4065 - QDR®-II, QDR-II+, DDR-II, and DDR-II+ Design Guide
AN80555 - 72-Mbit RH QDR®II+ Interface Controller Implementation Details
AN69702 - 72-Mbit RHQDRII+™ Power Modes
IBIS Models RadHard 72 Mb Two-Word Burst X18 QDR® II+ SRAM
RadHard 72 Mb Four-Word Burst X18 QDR® II+ SRAM
RadHard 72 Mb Two-Word Burst X36 QDR® II+ SRAM
RadHard 72 Mb Four-Word Burst X36 QDR® II+ SRAM
RadHard 4 Mb Fast Async SRAM
RadHard 144 Mb Two-Word Burst X18 QDR® II+ SRAM
RadHard 144 Mb Four-Word Burst X18 QDR® II+ SRAM
RadHard 144 Mb Two-Word Burst X36 QDR® II+ SRAM
RadHard 144 Mb Four-Word Burst X36 QDR® II+ SRAM
RadHard 4 Mb Fast Async SRAM
Cypress Quality Reports Quality and Reliability Reports
72 Mb Radiation-Hardened QDR®-II+ SRAM QTP
4 Mb Radiation Hardened Fast Asynchronous SRAM QTP
144 Mb Radiation-Hardened QDR®-II+ SRAM QTP
16 Mb Radiation-Hardened Asynchronous SRAM QTP
Military Temperature Datasheets CY7C1441KV33, Military Temperature, 36-Mbit (1M X 36) Flow-Through SRAM
CY7C1361KVE33, Military Temperature, 9-Mbit (256K x 36) Flow-Through SRAM
CY7C1381KVE33, Military Temp, 18-Mbit (512 K x 36) Flow-Through SRAM (With ECC)
CY7C1370KVE33 Military Temperature, 18-Mbit (512K X 36) Pipelined SRAM with NoBL™ Architecture (With ECC)
S29GL01GS, S29GL512S, S29GL256S, S29GL128S Military 1 Gbit (128 Mbyte), 512 Mbit (64 Mbyte), 256 Mbit (32 Mbyte), 128 Mbit (16 Mbyte), 3.0 V GL-S Flash Memory
CY7C1061G Military, 16-Mbit (1M words × 16 bit) Static RAM with Error-Correcting Code (ECC)
CY7S1061G/CY7S1061GE Military, 16-Mbit (1M words × 16 bit) Static RAM with PowerSnooze™ and ECC
S25FL512S Military 512 Mbit (64 Mbyte) 3.0V SPI Flash Memory
S25FL128S/S25FL256S, Military 128 Mbit (16 Mbyte)/256 Mbit (32 Mbyte) 3.0V SPI Flash Memory
CY15B102Q, Military, 2-Mbit (256K × 8) Serial (SPI) F-RAM
S70FL01GS, Military 1 Gbit (128 Mbyte) 3.0 V SPI Flash Memory

Radiation-Hardened Product Resources Summary

Radiation Resistance (TID, SEE)

Radiation Type 説明
Total Dose (TID) Radiation Resistance to permanent device damage caused by exposure to radiation (ions) over the life of the device. A trapped positive charge can result in field device turn-on. Cypress radiation-hardened SRAMs can operate up to a total dose of 300 Krad.
Single Event Effects (SEE) Loss of data and possible physical device damage caused by the impact of radiation particle (heavy ions, protons, or neutrons) which may result in device latch-up where a high current state is observed.

 

QML-V & QML-Q Screening

QML certification is the highest standard of reliability for microcircuit devices issue by the United States government. This certification indicates that the device can be relied upon to function properly while being subjected to the harshest of conditions. Cypress’ radiation-hardened SRAMs feature both the QML-V and QML-Q certifications.

Datapack

Cypress offers the option of purchasing a datapack with all QML-certified products. This datapack tabulates data gathered during the part certification process including radiation data, read and record electrical data, and tri-temperature test data. The datapack is offered in both hard and soft copy formats and is matched to individual part serial numbers.

Memory Controller

Memory controllers are available free of charge for Xilinx Virtex V5, Kintex US as well as for Microchip RTG4 FPGA’s for the RadHard 72M and 144M QDRII+ SRAM devices. The QDR-II+ SRAM controllers manage the intricate timing details of a DDR-based source synchronous timing architecture and ensure reliable data traffic between the FPGA and the QDRII+ SRAM memory. Controller embedded ECC (SECDEC) is also available as an RTL option if a higher level of radiation immunity is required to mitigate single event effects. Please contact radstop@cypress.com for a copy of the RTL code and test bench.

Reconfigurable Payload Processor

  • Fastest space-qualified cache SRAM – QDRII+ SRAM – 36 Gb/s
  • Highest endurance NV logging memory – FRAM – 1014 Cycles
  • Highest density radiation-hard NV – NOR Flash – 256Mb/512Mb
  • Fastest asynchronous SRAM – 12ns

Command & Control Microcontrollers

  • SPI boot FRAM
  • QSPI non-volatile data storage
  • Ethernet for space

Cypress QML Manufacturing Sites

Radiation Hard Products Assembled and Tested in US

Wafer Fabs

  • Skywater, Minnesota, USA
  • UMC, Tainan, Taiwan
  • Texas Instruments, Dallas, USA

Assembly and Test Facilities

  • DPA Components International, Simi Valley, USA
  • Micross Components, Orlando, USA
  • Cypress San Jose Test, San Jose, USA

Multiple wafer SORT and auxiliary manufacturing Facilities

  • Skywater, ChipMOS, KYEC for SORT
  • UTAC, Thailand for laser groove and die separation

Supported Space FPGA’s

  • Xilinx V5SiRF
 
  • Xilinx Kintex KU060
 
  • MicroChip RTG4
 
  • MicroChip PolarFire
 

DevKit Mezzanine Cards

Supported DevKits:

Xilinx FPGA Boot Configuration Support

The QSPI and Dual QSPI NOR Flash memory devices can be programmed either through the FPGA or directly with an external SPI programmer. Details can be found in the Application Note below: