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FM23MLD16, 8-MBIT (512KX16) F-RAM MEMORY | サイプレス セミコンダクタ

FM23MLD16, 8-MBIT (512KX16) F-RAM MEMORY

最終更新日: 
2015 年 10 月 22 日
バージョン: 
*C

特徴

8Mbit Ferroelectric Nonvolatile RAM
 

  • Organized as 512Kx16
  • Configurable as 1Mx8 Using /UB, /LB
  • High Endurance 100 Trillion (1014) Read/Writes
  • NoDelay™ Writes
  • Page Mode Operation to 33MHz
  • Advanced High-Reliability Ferroelectric Process
  • 詳しくは、PDFをご覧ください。 

説明

The FM23MLD16 is a 512Kx16 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns,  functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and very high write endurance make F-RAM superior to other types of memory.