You are here

FM23MLD16, 8-MBIT (512KX16) F-RAM MEMORY | サイプレス セミコンダクタ

FM23MLD16, 8-MBIT (512KX16) F-RAM MEMORY

最終更新日: 
2015 年 10 月 22 日
バージョン: 
*C

特徴

8Mbit Ferroelectric Nonvolatile RAM
 

  • Organized as 512Kx16
  • Configurable as 1Mx8 Using /UB, /LB
  • High Endurance 100 Trillion (1014) Read/Writes
  • NoDelay™ Writes
  • Page Mode Operation to 33MHz
  • Advanced High-Reliability Ferroelectric Process
  • 詳しくは、PDFをご覧ください。 

説明

The FM23MLD16 is a 512Kx16 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns,  functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and very high write endurance make F-RAM superior to other types of memory.

Dear valued customer,

Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you. 

Reliability and business continuity are of utmost importance for us. Hence, we remain fully committed to honoring existing customer and distributor relationships. This includes offering the legacy Cypress product portfolio. We thank you very much for your trusting support.

For the full version of this message, please download the PDF version.