CY62187EV30 MoBL®: 64-Mbit (4M x 16) Static RAM | サイプレス セミコンダクタ
CY62187EV30 MoBL®: 64-Mbit (4M x 16) Static RAM
最終更新日:
2019 年 12 月 11 日
バージョン：
*N
64-Mbit (4M x 16) Static RAM
特徴
- Very High Speed
- 55 ns
- Wide Voltage Range
- 2.2V to 3.6V
- Ultra Low Standby Power
- Typical Standby Current: 8μA
- Maximum Standby Current: 48μA
- Ultra Low Active Power
- Typical Active Current: 15 mA at f = 1 MHz
- Easy Memory Expansion with CE1, CE2, and OE Features
- Automatic Power Down when Deselected
- CMOS for Optimum Speed and Power
- Available in Pb-Free 48-Ball FBGA Package
機能説明
The CY62187EV30 is a high performance CMOS static RAM organized as 4 M words by 16-bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 99 percent when addresses are not toggling.
関連ファイル
| ファイル名 | 言語 | サイズ | 最終更新日 |
|---|---|---|---|
 CY62187EV30 MoBL®: 64-Mbit (4M x 16) Static RAM.pdf |
英語 | 277.27 KB | 12/11/2019 |
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