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CY62177EV18 MoBL®: 32-Mbit (2 M × 16 / 4 M × 8) Static RAM | サイプレス セミコンダクタ

CY62177EV18 MoBL®: 32-Mbit (2 M × 16 / 4 M × 8) Static RAM

最終更新日: 
2015 年 8 月 26 日
バージョン: 
*C

32-Mbit (2 M × 16 / 4 M × 8) Static RAM

特徴

  • Thin small outline package (TSOP) I configurable as 2 M × 16 or as 4 M x 8 static RAM (SRAM)
  • Very high speed
    • 70 ns
  • Wide voltage range
    • 1.65 V ~ 2.25 V
  • Ultra low standby power
    • Typical standby current: 3μA
    • Maximum standby current: 25μA
  • Ultra low active power
    • Typical active current: 4.5 mA at f = 1 MHz
  • 詳しくは、PDF をご覧ください。

機能説明

The CY62177EV18 is a high-performance CMOS static RAM organized as 2 M words by 16 bits and 4 M words by 8 bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life™ (MoBL®) in portable applications, such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99 percent when addresses are not toggling.