CY62167E: 16-Mbit (1 M × 16 / 2 M × 8) Static RAM | サイプレス セミコンダクタ
CY62167E: 16-Mbit (1 M × 16 / 2 M × 8) Static RAM
最終更新日:
2020 年 6 月 26 日
バージョン:
*G
16-Mbit (1 M × 16 / 2 M × 8) Static RAM
特徴
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Configurable as 1 M × 16 or as 2 M × 8 SRAM
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Very high speed: 45 ns
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Wide voltage range: 4.5 V ~ 5.5 V
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Ultra low standby power
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Typical standby current: 1.5μA
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Maximum standby current: 12μA
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Ultra low active power
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Typical active current: 2.2 mA at f = 1 MHz
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Easy memory expansion with CE1, CE2, and OE features
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Automatic power-down when deselected
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CMOS for optimum speed and power
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Offered in 48-pin TSOP I package
機能説明
The CY62167E is a high performance CMOS static RAM organized as 1 M words by 16-bits/2 M words by 8-bits. This device features advanced circuit design to provide an ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications. The device also has an automatic power down feature that reduces power consumption by 99% when addresses are not toggling.