CY62167E: 16-Mbit (1 M × 16 / 2 M × 8) Static RAM

16-Mbit (1 M × 16 / 2 M × 8) Static RAM

特徴

• Configurable as 1 M × 16 or as 2 M × 8 SRAM
• Very high speed: 45 ns
• Wide voltage range: 4.5 V ~ 5.5 V
• Ultra low standby power
  • Typical standby current: 1.5μA
  • Maximum standby current: 12μA
• Ultra low active power
  • Typical active current: 2.2 mA at f = 1 MHz
• Easy memory expansion with CE1, CE2, and OE features
• Automatic power-down when deselected
• CMOS for optimum speed and power
• Offered in 48-pin TSOP I package

機能説明

The CY62167E is a high performance CMOS static RAM organized as 1 M words by 16-bits/2 M words by 8-bits. This device features advanced circuit design to provide an ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications. The device also has an automatic power down feature that reduces power consumption by 99% when addresses are not toggling.