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CY62158H MoBL®, 8-Mbit (1 M Words × 8 Bits) Static RAM with Error-Correcting Code (ECC) | サイプレス セミコンダクタ

CY62158H MoBL®, 8-Mbit (1 M Words × 8 Bits) Static RAM with Error-Correcting Code (ECC)

最終更新日: 
2018年4月18日
バージョン: 
*E

CY62158H is a high-performance CMOS low-power (MoBL) SRAM device with embedded ECC. Device is accessed by asserting both chip enable inputs – CE1 as LOW and CE2 as HIGH. Write to the device is performed by taking Chip Enable 1 (CE1) LOW and Chip Enable 2 (CE2) HIGH and the Write Enable (WE) input LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A19).

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