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CY62137FV18 MoBL®: 2-Mbit (128 K × 16) Static RAM | サイプレス セミコンダクタ

CY62137FV18 MoBL®: 2-Mbit (128 K × 16) Static RAM

2017 年 12 月 03 日

2-Mbit (128K x 16) Static RAM


  • Very high speed: 55 ns
  • Wide voltage range: 1.65 V ~ 2.25 V
  • Pin compatible with CY62137CV18
  • Ultra low standby power
    • Typical standby current: 1μA
    • Maximum standby current: 5μA
  • Ultra low active power
    • Typical active current: 1.6 mA @ f = 1 MHz
  • 詳しくは、PDF をご覧ください。


The CY62137FV18 is a high performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.