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CY14V116N: 16-Mbit (1024 K × 16) nvSRAM | サイプレス セミコンダクタ

CY14V116N: 16-Mbit (1024 K × 16) nvSRAM

最終更新日: 
2020 年 11 月 04 日
バージョン: 
*J

16-Mbit (1024 K × 16) nvSRAM

特徴

  • 16-Mbit nonvolatile static random access memory (nvSRAM)
  • 高い信頼性
  • Sleep mode operation
  • 低消費電力
  • Operating voltage
  • Industrial temperature: –40℃~+85℃
  • 165-ball fine-pitch ball grid array (FBGA) package
  • Restriction of hazardous substances (RoHS) compliant
  • 詳しくは、PDFをご覧ください。 

機能説明

The Cypress CY14V116N is a fast SRAM, with a nonvolatile element in each memory cell. メモリは各 16 ビットの単語 1024K として構成されています。組み込み不揮発性エレメントには、QuantumTrap テクノロジが組み込まれており、世界でも最高レベルの信頼性を誇る不揮発性メモリを作り上げます。The SRAM can be read and written an infinite number of times. The nonvolatile data residing in the nonvolatile elements do not change when data is written to the SRAM.

Dear valued customer,

Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you. 

Reliability and business continuity are of utmost importance for us. Hence, we remain fully committed to honoring existing customer and distributor relationships. This includes offering the legacy Cypress product portfolio. We thank you very much for your trusting support.

For the full version of this message, please download the PDF version.