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CY14C512Q/CY14B512Q/CY14E512Q, 512-KBIT (64K X 8) SPI NVSRAM | サイプレス セミコンダクタ

CY14C512Q/CY14B512Q/CY14E512Q, 512-KBIT (64K X 8) SPI NVSRAM

最終更新日: 
2020 年 11 月 03 日
バージョン: 
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The Cypress CY14X512Q combines a 512-Kbit nvSRAM with a nonvolatile element in each memory cell with serial SPI interface.

特徴

  • 512-Kbit nonvolatile static random access memory (nvSRAM) internally organized as 64 K × 8
    • STORE to QuantumTrap nonvolatile elements initiated automatically on power-down (AutoStore) or by using SPI instruction (Software STORE) or HSB pin (Hardware STORE)
    • SRAMへのRECALL処理は、電源オン(起動 Recall)またはSPI命令(Software Recall)によって実行
    • Support automatic STORE on power-down with a small capacitor (except for CY14X512Q1A)
  • 高い信頼性
    • 回数に制限のないリード、ライト、RECALL サイクル
    • 1million STORE cycles to QuantumTrap
    • データ保存期間: 20 years at 85 °C
  • 40-MHz, and 104-MHz High-speed serial peripheral interface (SPI)
    • 40-MHz clock rate SPI write and read with zero cycle delay
    • 104-MHz clock rate SPI write and SPI read (with special fast read instructions)
    • Supports SPI mode 0 (0,0) and mode 3 (1,1)
  • SPI access to special functions
    • Nonvolatile STORE/RECALL
    • 8-byte serial number
    • Manufacturer ID and Product ID
    • Sleep mode
  • Write protection
    • Hardware protection using Write Protect (WP) pin
    • Software protection using Write Disable instruction
    • Software block protection for 1/4, 1/2, or entire array
  • 低消費電力
    • Average active current of 3 mA at 40 MHz operation
    • Average standby mode current of 150 μA
    • Sleep mode current of 8 μA
  • Industry standard configurations
    • Operating voltages:
      • CY14C512Q: VCC = 2.4 V to 2.6 V
      • CY14B512Q: VCC = 2.7 V to 3.6 V
      • CY14E512Q: VCC = 4.5 V to 5.5 V
    • 工業用温度
    • 8- and 16-pin small outline integrated circuit (SOIC) package
    • Restriction of hazardous substances (RoHS) compliant



機能概要

The Cypress CY14X512Q combines a 512-Kbit nvSRAM with a nonvolatile element in each memory cell with serial SPI interface. メモリは各 8 ビットの単語 64K として構成されています。組み込み不揮発性エレメントには、QuantumTrap テクノロジが組み込まれており、世界でも最高レベルの信頼性を誇る不揮発性メモリを作り上げます。回数に制限のない読み取りと書き込みをSRAMで可能にする一方、高い信頼性を提供する不揮発性データ記憶域をQuantumTrapセルで実現しています。Data transfers from SRAM to the nonvolatile elements (STORE operation) takes place automatically at power-down (except for CY14X512Q1A). On power-up, data is restored to the SRAM from the nonvolatile memory (RECALL operation). You can also initiate the STORE and RECALL operations through SPI instruction.