You are here

CY14C101J, CY14B101J, CY14E101J: 1-Mbit (128 K × 8) Serial (I2C) nvSRAM | サイプレス セミコンダクタ

CY14C101J, CY14B101J, CY14E101J: 1-Mbit (128 K × 8) Serial (I2C) nvSRAM

最終更新日: 
2020 年 5 月 28 日
バージョン: 
*P

特徴

  • 1-Mbit nonvolatile static random access memory (nvSRAM)
    • Internally organized as 128 K × 8
    • STORE to QuantumTrap nonvolatile elements initiated automatically on power-down (AutoStore) or by using I2C command (Software STORE) or HSB pin (Hardware STORE)
    • RECALL to SRAM initiated on power-up (Power-Up RECALL) or by I2C command (Software RECALL)
    • Automatic STORE on power-down with a small capacitor (except for CY14X101J1)
  • 高い信頼性
    • 回数に制限のないリード、ライト、RECALL サイクル
    • QuantumTrap に対する 100 万回の STORE サイクル
    • データ保存期間: 20 years at 85 °C
  • High speed I2C interface
    • Industry standard 100 kHz and 400 kHz speed
    • Fast-mode Plus: 1 MHz speed
    • High speed: 3.4MHz
    • Zero cycle delay reads and writes
  • Write protection
    • Hardware protection using Write Protect (WP) pin
    • Software block protection for 1/4, 1/2, or entire array
  • I2C access to special functions
    • Nonvolatile STORE/RECALL
    • 8 byte serial number
    • Manufacturer ID and Product ID
    • Sleep mode
  • 低消費電力
    • Average active current of 1 mA at 3.4 MHz operation
    • Average standby mode current of 150 μA
    • Sleep mode current of 8 μA
  • Industry standard configurations
    • Operating voltages:
      • CY14C101J: VCC = 2.4 V to 2.6 V
      • CY14B101J: VCC = 2.7 V to 3.6 V
      • CY14E101J: VCC = 4.5 V to 5.5 V
    • 工業用温度
    • 8- and 16-pin small outline integrated circuit (SOIC) package
    • Restriction of hazardous substances (RoHS) compliant


概要

The Cypress CY14C101J/CY14B101J/CY14E101J combines a 1-Mbit nvSRAM with a nonvolatile element in each memory cell. メモリは各 8 ビットの単語 128K として構成されています。組み込み不揮発性エレメントには、QuantumTrap テクノロジが組み込まれており、世界でも最高レベルの信頼性を誇る不揮発性メモリを作り上げます。回数に制限のない読み取りと書き込みをSRAMで可能にする一方、高い信頼性を提供する不揮発性データ記憶域をQuantumTrapセルで実現しています。Data transfers from SRAM to the nonvolatile elements (STORE operation) takes place automatically at power-down (except for CY14X101J1). On power-up, data is restored to the SRAM from the nonvolatile memory (RECALL operation). The STORE and RECALL operations can also be initiated by the user through I2C commands.