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AN96578 - Designing with I2C F-RAM™

最終更新日: 
2020 年 5 月 29 日
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AN96578 provides design guidelines and example circuits to help you design with the I2C F-RAM™ device, a high performance nonvolatile serial interface memory.

Ferroelectric Random Access Memory (F-RAM) is a nonvolatile memory that uses ferroelectric technology to store data. The serial F-RAM device offers advantages over other nonvolatile serial memories due to its no-delay (or zero-delay) write. F-RAM can write hundreds of bytes in tens of microseconds. In comparison, EEPROM and flash memories take tens of milliseconds to write the same amount of data. The ability of F-RAM to write data quickly before losing power is particularly useful in systems that require preserving machine state information, parameter settings, or other vital data in a power-down event. F-RAM also has very high endurance over other nonvolatile solutions, allowing a large number of writes/reads to F-RAM without damaging its nonvolatile cells. F-RAM is a true nonvolatile RAM since it combines the advantages of both RAM and nonvolatile memory.

F-RAM is available in different interface options such as SPI, I2C, and parallel. This application note discusses the F-RAM I2C interface. It describes the different I2C F-RAM configurations, shows I2C F-RAM interface in a typical system, and gives design guidelines and data format for using I2C F-RAM in a system. 

翻訳版のドキュメントは参照用です。設計開発に携わっている場合には、英語版のドキュメントを参照されることをお勧めします。