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AN15979 - Soft Errors in nvSRAM | サイプレス セミコンダクタ

AN15979 - Soft Errors in nvSRAM

最終更新日: 
2021 年 3 月 02 日
バージョン: 
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AN15979 describes the causes of soft error in memories and how the nvSRAM architecture, features, and packaging techniques act to reduce these soft errors.

はじめに

The Soft Error Rate (SER) of advanced CMOS devices is higher than all other reliability mechanisms combined together. So it becomes necessary for the high-speed memory architectures to counter the effect of soft errors. The Cypress nvSRAM with its unique architecture and special features such as Software STORE and Software RECALL can correct soft errors on the fly. This capability combined with Cypress’s intense SER test methodology makes nvSRAM one of the most reliable memory devices against the soft errors.

Dear valued customer,

Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you. 

Reliability and business continuity are of utmost importance for us. Hence, we remain fully committed to honoring existing customer and distributor relationships. This includes offering the legacy Cypress product portfolio. We thank you very much for your trusting support.

For the full version of this message, please download the PDF version.

翻訳版のドキュメントは参照用です。設計開発に携わっている場合には、英語版のドキュメントを参照されることをお勧めします。