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CY62167E:16-Mbit (1 M × 16 / 2 M × 8) Static RAM | Cypress Semiconductor

CY62167E:16-Mbit (1 M × 16 / 2 M × 8) Static RAM

最終更新日: 
2015 年 8 月 27 日
バージョン: 
*G

16-Mbit (1 M × 16 / 2 M × 8) Static RAM

特徴

  • Configurable as 1 M × 16 or as 2 M × 8 SRAM
  • Very high speed:45 ns
  • Wide voltage range:4.5 V ~ 5.5 V
  • Ultra low standby power
    • Typical standby current:1.5μA
    • Maximum standby current:12μA
  • Ultra low active power
    • Typical active current:2.2 mA at f = 1 MHz
  • Easy memory expansion with CE1, CE2, and OE features
  • Automatic power-down when deselected
  • CMOS for optimum speed and power
  • Offered in 48-pin TSOP I package

機能説明

The CY62167E is a high performance CMOS static RAM organized as 1 M words by 16-bits/2 M words by 8-bits.This device features advanced circuit design to provide an ultra low active current.This is ideal for providing More Battery Life™ (MoBL®) in portable applications.The device also has an automatic power down feature that reduces power consumption by 99% when addresses are not toggling.